Optimized activation prevention assembly for a gas delivery system and methods therefor

ABSTRACT

An optimized activation prevention assembly for a gas delivery system is disclosed. The apparatus includes a pneumatically operated valve assembly. The apparatus also includes a toggle switch mechanically attached to the pneumatically operated valve assembly, the toggle switch includes a toggle arm, the toggle arm being positioned in one of an activation zone and a deactivation zone, wherein when the toggle arm is positioned in the activation zone, the pneumatically operated valve is activated, and wherein when the toggle arm is positioned in the deactivation zone, the pneumatically operated valve is deactivated. The apparatus further includes an activation prevention mechanism attached to the toggle switch, wherein when the activation prevention mechanism being configured for preventing the toggle arm from being repositioned from the deactivation zone to the activation zone without at least bypassing a lockout function of the optimized activation prevention mechanism.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority from U.S. Provisional Application No.60/689,390 entitled “OPTIMIZED LOCKOUT/TAGOUT ASSEMBLY FOR A GASDELIVERY SYSTEM” by inventor Mark Taskar (filed Jun. 10, 2005, which isincorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates in general to substrate manufacturingtechnologies and in particular to an optimized activation preventionassembly for a gas delivery system, and methods therefor.

In the processing of a substrate, e.g., a semiconductor wafer, MEMSdevice, or a glass panel such as one used in flat panel displaymanufacturing, plasma is often employed. As part of the processing of asubstrate (chemical vapor deposition, plasma enhanced chemical vapordeposition, physical vapor deposition, etch, etc.) for example, thesubstrate is divided into a plurality of dies, or rectangular areas,each of which will become an integrated circuit. The substrate is thenprocessed in a series of steps in which materials are selectivelyremoved (etching) and deposited (deposition) in order to form electricalcomponents thereon.

In a first exemplary plasma process, a substrate is coated with a thinfilm of hardened emulsion (such as a photoresist mask) prior to etching.Areas of the hardened emulsion are then selectively removed, causingparts of the underlying layer to become exposed. The substrate is thenplaced in a plasma processing chamber on a substrate support structurecomprising a mono-polar or bi-polar electrode, called a chuck.Appropriate etchant source gases (e.g., C4F8, C4F6, CHF3, CH2F3, CF4,CH3F, C2F4, N2, O2, Ar, Xe, He, H2, NH3, SF6, BCl3, Cl2, etc.) are thenflowed into the chamber and struck to form a plasma to etch exposedareas of the substrate.

In general, there are three types of etch processes: pure chemical etch,pure physical etch, and reactive ion etch. Pure chemical etchinggenerally involves no physical bombardment, but rather a chemicalinteraction with materials on the substrate. The chemical reaction ratecould be very high or very low, depending on the process. For example,fluorine-based molecules tend to chemically interact with dielectricmaterials on the substrate, wherein oxygen-based molecules tend tochemically interact with organic materials on the substrate, such asphotoresist.

Pure ion etching is often called sputtering. Usually an inert gas, suchas Argon, is ionized in a plasma and used to dislodge material from thesubstrate. That is, positively charged ions accelerate toward anegatively charged substrate. Pure ion etching is both isotropic (i.e.,principally in one direction) and non-selective. That is, selectivity toa particular material tends to be very poor, since the direction of theion bombardment is mostly perpendicular to the substrate surface inplasma etch process. In addition, the etch rate of the pure ion etchingis commonly low, depending generally on the flux and energy of the ionbombardment.

Etching that combines both chemical and ion processes is often calledreactive ion etch (RIE), or ion assist etch. Generally ions in theplasma enhance a chemical process by striking the surface of thesubstrate, and subsequently breaking the chemical bonds of the atoms onthe surface in order to make them more susceptible to reacting with themolecules of the chemical process. Since ion etching is mainlyperpendicular, while the chemical etching is both perpendicular andvertical, the perpendicular etch rate tends to be much faster than inthen horizontal direction. In addition, RIE tends to have an anisotropicprofile.

However, because plasma processing system operation may also bedangerous (i.e., poisonous gases, high voltages, etc.), worker safetyregulations often mandate that plasma processing manufacturing equipmentinclude activation prevention capability, such as a lockout/tagoutmechanism. Generally a lockout is a device that uses positive means suchas a lock, either key or combination type, to hold an energy-isolatingdevice in a safe position, thereby preventing the energizing ofmachinery or equipment. For example, when properly installed, a blankflange or bolted slip blind are considered equivalent to lockoutdevices.

A tagout device is generally any prominent warning device, such as a tagand a means of attachment, that can be securely fastened to anenergy-isolating device in accordance with an established procedure. Thetag indicates that the machine or equipment to which it is attached isnot to be operated until the tagout device is removed in accordance withthe energy control procedure. An energy-isolating device is anymechanical device that physically prevents the transmission or releaseof energy. These include, but are not limited to, manually-operatedelectrical circuit breakers, disconnect switches, line valves, andblocks. For example, a device is generally capable of being locked outif it meets one of the following requirements: a) it is designed with ahasp to which a lock can be attached; b) it is designed with any otherintegral part through which a lock can be affixed; c) it has a lockingmechanism built into it; or d) it can be locked without dismantling,rebuilding, or replacing the energy isolating device or permanentlyaltering its energy control capability.

Referring now to FIG. 1, a simplified diagram of an inductively coupledplasma processing system is shown. Generally, an appropriate set ofgases may be flowed from gas distribution system 122 into plasma chamber102 having plasma chamber walls 117. These plasma processing gases maybe subsequently ionized at or in a region near injector 109 to form aplasma 110 in order to process (e.g., etch or deposit) exposed areas ofsubstrate 114, such as a semiconductor substrate or a glass pane,positioned with edge ring 115 on an electrostatic chuck 116.

A first RF generator 134 generates the plasma as well as controls theplasma density, while a second RF generator 138 generates bias RF,commonly used to control the DC bias and the ion bombardment energy.Further coupled to source RF generator 134 is matching network 136 a,and to bias RF generator 138 is matching network 136 b, that attempt tomatch the impedances of the RF power sources to that of plasma 110.Furthermore, vacuum system 113, including a valve 112 and a set of pumps111, is commonly used to evacuate the ambient atmosphere from plasmachamber 102 in order to achieve the required pressure to sustain plasma110 and/or to remove process byproducts.

Referring now to FIG. 2, a simplified diagram of a capacitively coupledplasma processing system is shown. Generally, capacitively coupledplasma processing systems may be configured with a single or withmultiple separate RF power sources. Source RF, generated by source RFgenerator 234, is commonly used to generate the plasma as well ascontrol the plasma density via capacitively coupling. Bias RF, generatedby bias RF generator 238, is commonly used to control the DC bias andthe ion bombardment energy. Further coupled to source RF generator 234and bias RF generator 238 is matching network 236, which attempts tomatch the impedance of the RF power sources to that of plasma 220. Otherforms of capacitive reactors have the RF power sources and matchnetworks connected to the top electrode 204. In addition there aremulti-anode systems such as a triode that also follow similar RF andelectrode arrangements.

Generally, an appropriate set of gases is flowed through an inlet in atop electrode 204 from gas distribution system 222 into plasma chamber202 having plasma chamber walls 217. These plasma processing gases maybe subsequently ionized to form a plasma 220, in order to process (e.g.,etch or deposit) exposed areas of substrate 214, such as a semiconductorsubstrate or a glass pane, positioned with edge ring 215 on anelectrostatic chuck 216, which also serves as an electrode. Furthermore,vacuum system 213, including a valve 212 and a set of pumps 211, iscommonly used to evacuate the ambient atmosphere from plasma chamber 202in order to achieve the required pressure to sustain plasma 220.

Since it is not uncommon to have over seventeen different gases coupledto a single plasma processing system, manufactures generally configuretheir gas delivery systems in high density flow component configurationscalled “gas sticks,” which may themselves be constructed in the form ofa manifold assembly (i.e., stainless steel, etc.) attached to asubstrate assembly. A gas flow control component generally needs only beattached to the manifold assembly on one side to complete the gas flowchannels that are drilled into the manifold assembly itself.

Referring now to FIG. 3, a simplified diagram of gas stick is shown. Ina common configuration, a gas cylinder (not shown) is coupled to aninlet valve 302, which allows an operator to shut off any source gasflow into the stick. In some configurations, inlet valve 302 is manuallyoperated. In other configurations, inlet valve 302 is pneumaticallyoperated. That is, inlet valve 302 is operated by a compressed gas, suchas compressed air. In addition, although as previously stated, it isoften mandated that plasma processing systems have lockout/tagoutfunctionality, it is not generally common to integrate lockout/tagoutfunctionality into inlet valve 302 because of space limitations withinthe gas distribution system.

Inlet valve 302 may be further coupled to regulator/transducer 304 thatsubstantially maintains a constant pressure to mass flow controller 308,which may be attached to primary shutoff valve 312, which generallyallows gas flow in the gas stick to be blocked. Optionally, filter 306is placed between regulator/transducer 304 and primary shutoff valve 312to remove any particulates that may have entered the gas stream. Inaddition, a purge valve 310 is generally located between primary shutoffvalve 312 and mass flow controller 308. Mass flow controller 308 isgenerally a self-contained device (consisting of a transducer, controlvalve, and control and signal-processing electronics) commonly used tomeasure and regulate the mass flow of gas to the plasma processingsystem.

Further coupled to mass flow controller 308, and generally not includedin the gas stick itself, is a mixing manifold 314 that generallycombines the gas flows from each of the appropriate gas sticks andchannels the mixed gases into plasma chamber 318 through injector 316.

However, the density of flow components to each other in a gasdistribution system also tends to make individual gas stick activationprevention problematic, particularly at a gas stick inlet valve. In atypical configuration, all the plasma gases must generally be turned offand then vented, should an employee wish to physically access the gasdistribution system, for example, as part of the tool assembly process,or in order to integrate the plasma processing system with a customerfabrication facility. This venting process may be further aggravatedsince the plasma gas shutoff for the gas feed into the inlet valve(prior to entering the gas stick) may not be physically located at theplasma processing system. Hence, an employee may either need to wastetime traveling to the plasma gas shutoff location, or the employee mayneed to coordinate with another employee do the same. It would thus beadvantageous to quickly and safely turn off a single gas stick in orderto debug a problem or test a gas flow.

In view of the foregoing, there are desired an optimized activationprevention assembly for a gas delivery system and methods therefor.

SUMMARY OF THE INVENTION

The invention relates, in an embodiment, to an optimized activationprevention assembly for a gas delivery system. The apparatus includes apneumatically operated valve assembly. The apparatus also includes atoggle switch mechanically attached to the pneumatically operated valveassembly, the toggle switch includes a toggle arm, the toggle arm beingpositioned in one of an activation zone and a deactivation zone, whereinwhen the toggle arm is positioned in the activation zone, thepneumatically operated valve is activated, and wherein when the togglearm is positioned in the deactivation zone, the pneumatically operatedvalve is deactivated. The apparatus further includes an activationprevention mechanism attached to the toggle switch, wherein when theactivation prevention mechanism being configured for preventing thetoggle arm from being repositioned from the deactivation zone to theactivation zone without at least bypassing a lockout function of theoptimized activation prevention mechanism.

The invention relates, in an embodiment, to a method of preventing theactivation of a pneumatically operated valve assembly in a gas deliverysystem. The method includes providing the pneumatically operated valveassembly. The method also includes attaching a toggle switch to thepneumatically operated valve assembly, the toggle switch including atoggle arm, the toggle arm being positioned in one of an activation zoneand a deactivation zone, the toggle switch further configured such thatwhen the toggle switch is positioned in the activation zone, thepneumatically operated valve is activated, and wherein when the togglearm is positioned in the deactivation zone, the pneumatically operatedvalve is deactivated. The method further includes attaching anactivation prevention mechanism to the toggle switch, the activationprevention mechanism being configured for preventing the toggle arm frombeing repositioned from the deactivation zone to the activation zonewithout at least bypassing a lockout function of the optimizedactivation prevention mechanism.

The invention relates, in an embodiment, to an apparatus for preventingthe activation of a pneumatically operated valve assembly in a gasdelivery system. The apparatus includes a means for providing thepneumatically operated valve assembly. The apparatus also includes ameans for attaching a toggle switch to the pneumatically operated valveassembly, the toggle switch including a toggle arm, the toggle arm beingpositioned in one of an activation zone and a deactivation zone, thetoggle switch further configured such that when the toggle switch ispositioned in the activation zone, the pneumatically operated valve isactivated, and wherein when the toggle arm is positioned in thedeactivation zone, the pneumatically operated valve is deactivated. Theapparatus further includes a means for attaching an activationprevention mechanism to the toggle switch, the activation preventionmechanism being configured for preventing the toggle arm from beingrepositioned from the deactivation zone to the activation zone withoutat least bypassing a lockout function of the optimized activationprevention mechanism.

These and other features of the present invention will be described inmore detail below in the detailed description of the invention and inconjunction with the following figures.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example, and not by wayof limitation, in the figures of the accompanying drawings and in whichlike reference numerals refer to similar elements and in which:

FIG. 1 illustrates a simplified diagram of an inductively coupled plasmaprocessing system;

FIG. 2 illustrates a simplified diagram of a capacitively coupled plasmaprocessing system;

FIG. 3 illustrates a simplified diagram of gas stick;

FIG. 4 illustrates a simplified lockout/tagout procedure, according toone embodiment of the invention;

FIG. 5 illustrates a simplified diagram of an optimized activationprevention assembly integrated into a pneumatically operated valve,according to one embodiment of the invention;

FIG. 6 illustrates a simplified set of diagrams of an optimizedactivation prevention assembly, according to one embodiment of theinvention; and

FIG. 7 illustrates a simplified method of preventing the activation of apneumatically operated valve assembly in a gas delivery system,according to one embodiment of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will now be described in detail with reference toa few preferred embodiments thereof as illustrated in the accompanyingdrawings. In the following description, numerous specific details areset forth in order to provide a thorough understanding of the presentinvention. It will be apparent, however, to one skilled in the art, thatthe present invention may be practiced without some or all of thesespecific details. In other instances, well known process steps and/orstructures have not been described in detail in order to notunnecessarily obscure the present invention.

In general, as previously described, worker safety regulations oftenmandate that plasma processing manufacturing equipment includeactivation prevention capability, such as a lockout/tagout mechanism.Generally a lockout is a device that uses positive means such as a lock,either key or combination type, to hold an energy-isolating device in asafe position. A tagout device is generally any prominent warningdevice, such as a tag and a means of attachment that can be securelyfastened to energy-isolating device in accordance with an establishedprocedure.

However, gas stick density tends to make individual gas stick activationprevention problematic, particularly at a gas stick inlet valve. In anon-obvious way, unlike commonly used gas stick lockout/tagouttechniques of directly blocking plasma gas flow with a manual valve(energy-isolating device), the current invention indirectly blocksplasma gas flow by manually deactivating a pneumatically operated valve.That is, manually blocking compressed gas flow to a pneumaticallyoperated valve causes the valve to become deactivated (closed), which inturn effectively stops plasma gas flow within the gas stick. Thus, theintegration of a lockout/tagout mechanism with a pneumatically operatedvalve may allow gas stick component density to be maintained, whilesubstantially improving employee safety by allowing each gas stick to beindividually and quickly locked and/or tagged.

In an embodiment, an optimized activation prevention assembly isadvantageously employed on a gas stick inlet valve. In an embodiment,the optimized activation prevention assembly includes a lockoutmechanism. In an embodiment, the optimized activation preventionassembly includes a tagout mechanism. A lockout mechanism generallyallows a lock to be attached in order to place a device in a safeposition, while a tagout mechanism may notify an employee as to thepresence of the lock.

Although usually mandated by regulation, this invention does not requirethat both the lock and the tag be simultaneously added to the optimizedactivation prevention assembly. In an embodiment, the optimizedactivation prevention assembly is integrated into a manual gas stickinlet valve. In an embodiment, the optimized activation preventionassembly is integrated into a pneumatically operated valve, such thatengaging the lockout/tagout mechanism of the optimized activationprevention assembly blocks compressed gas from activating thepneumatically operated valve. In an embodiment, the pneumaticallyoperated valve is an IGS (integrated gas system) valve.

Referring now to FIG. 4, a simplified lockout/tagout procedure is shown,according to one embodiment of the invention. At step 402, the plasmaprocessing system is prepared for shutdown. Next, at step 404, theplasma processing system is actually shut down. Next, at step 406, theplasma processing system is isolated from the gas source (e.g., byshutting the inlet valve, etc.). Next, at step 408, the lockout/tagoutdevice is added to the energy-isolating device (e.g., inlet valve,etc.). Next, at step 410 all potentially hazardous stored or residualenergy is safely released (e.g., by venting any gas in the plasma stick,etc.). Finally at step 412, the isolation of the plasma processingsystem from the gas source is verified prior to the start of service ormaintenance work.

Referring now to FIG. 5, a simplified diagram of a optimized activationprevention assembly integrated into a pneumatically operated valve isshown, according to an embodiment of the invention. In an embodiment,the valve is an integrated surface mount valve. In general, anintegrated surface mount component is a gas control component (e.g.,valve, filter, etc.) that is connected to other gas control componentsthrough channels on a substrate assembly, upon which the gas controlcomponents are mounted. This is in contrast to gas control componentsthat are generally attached through bulky conduits with VCR attachments(vacuum coupled ring).

In an embodiment, the valve is a gas stick inlet valve. In anembodiment, the valve is an IGS valve. Mounted on a substrate assembly(not shown) is typically a manifold assembly 502 to which pneumaticallyoperated valve 506 is attached through an adapter 504. In an embodiment,adapter 504 is threaded. In a typical configuration, a pressure coupling508 allows a compressed gas line (not shown) to be attached topneumatically operated valve 506 through adapter-fitting 510. That is,as compressed air enters pneumatically operated valve 506 throughadapter-fitting 510, a valve mechanism is engaged and gas is allowed toflow in the gas stick.

In an embodiment, adapter 510 is threaded. Further attached to adapter510 is a manual shutoff switch 512 and lockout/tagout mechanism 514.When manual shutoff switch 512 is engaged by toggle arm 516, compressedgas is blocked causing pneumatically operated valve 506 to bedeactivated, and stopping plasma gas flow within the gas stick. Inaddition, the manual shutoff switch 512 may also contain an exhaust portallowing any compressed air that was in pneumatically operated valve506, prior to the engagement of manual shutoff switch 512, to be vented.That is, the pressure within pneumatically operated valve 506 may bemade substantially the same as the pressure outside pneumaticallyoperated valve 506. In addition, a lock and/or tag may thus be added tolockout/tagout mechanism 514, in order to substantially insure the safemaintenance of the plasma processing system. In an embodiment, theoptimized activation prevention assembly is configured to minimize earlyor accidental removal. That is, pneumatically operated valve 506 may notbe activated without first removing the lock and/or tag, or elsesubstantially damaging the optimized activation prevention assembly. Inan embodiment, the lock is non-reusable. In an embodiment, the lock isattachable by hand. In an embodiment, the lock is self-locking. In anembodiment, the lock is non-releasable. In an embodiment, the tag is aone-piece nylon cable tie. In an embodiment, the tag states one of thefollowing: “DO NOT START,” “DO NOT OPEN,” “DO NOT CLOSE,” “DO NOTENERGIZE,” and “DO NOT OPERATE.”

Referring now to FIG. 6, a simplified set of top view and side view oflockout/tagout mechanism 514 of FIG. 5 is shown, according to anembodiment of the invention. In general, a toggle arm, e.g., toggle arm516, may be inserted through cavity 608 (wherein cavity 608 is disposedin a first portion 622 of lockout/tagout mechanism 514), such thattoggle arm 516 is sandwiched between panels 604 a-b (wherein panels arecoupled with a second portion 624 of lockout/tagout mechanism 514).Second portion 624 is at a constant angle 610 to first portion 622,angle 610 being between greater than 90 degrees and less than 180degrees. Lockout/tagout mechanism 514 further includes a deactivationzone 614 and an activation zone 612, such that when toggle arm 516 ispositioned in deactivation zone 614 (deactivating pneumatically operatedvalve 506 as shown in FIG. 5), and a lock 602 (e.g., a lock well knownin the art) is positioned through channels 605-606 and positioned afirst position 626 determining a limit of deactivation zone 614, togglearm 516 cannot be repositioned to activation zone 612 without bypassinglockout/tagout mechanism 514 (e.g., tearing panels 604 a-b, removinglock 602, bending lockout/tagout mechanism 514, etc.). A limit ofactivation zone 612 may be determined by a position 628 of lock 602.

Referring now to FIG. 7, a simplified method of preventing theactivation of a pneumatically operated valve assembly in a gas deliverysystem. Initially, at step 702, a pneumatically operated valve assemblyis provided. Next, at step 704, a toggle switch is attached to thepneumatically operated valve assembly, the toggle switch including atoggle arm, the toggle arm being positioned in one of an activation zoneand a deactivation zone. Finally, at step 706 an activation preventionmechanism is attached to the toggle switch.

While this invention has been described in terms of several preferredembodiments, there are alterations, permutations, and equivalents whichfall within the scope of this invention. For example, although thepresent invention has been described in connection with Lam Researchplasma processing systems (e.g., Exelan™, Exelan™ HP, Exelan™ HPT,2300™, Versys™ Star, etc.), other plasma processing systems may be used.This invention may also be used with substrates of various diameters(e.g., 200 mm, 300 mm, etc.). In addition, any type of pneumaticallyoperated valve may be used. It should also be noted that there are manyalternative ways of implementing the methods of the present invention.

Advantages of the invention include the avoidance of cost related tonon-optimized gas delivery systems, in which all the plasma gases mustgenerally be turned off and then vented, should an employee wish tophysically access the gas distribution system for maintenance, assembly,or integration. Additional advantages include allowing gas stickcomponent density to be maintained, while substantially improvingemployee safety by allowing each gas stick to be individually andquickly locked and/or tagged.

Having disclosed exemplary embodiments and the best mode, modificationsand variations may be made to the disclosed embodiments while remainingwithin the subject and spirit of the invention as defined by thefollowing claims.

1. An integrated gas stick coupled to an input manifold of a plasmaprocessing center, the integrated gas stick controlling a flow of aprocess gas into the input manifold, comprising: a gas valve operativelycoupled to the input manifold; a toggle arm configured to be disposed inone of a toggle activation position and a toggle deactivation position;a lockout mechanism coupled with the gas valve, the lockout mechanismbeing configured to prevent the toggle arm from being repositioned fromthe toggle deactivation position to the toggle activation positionwithout bypassing a lock when the lock is employed with the lockoutmechanism; a toggle operated switch coupled to the toggle arm; apressure coupling for receiving compressed gas; an adapter fittinghaving a fitting top, a fitting bottom opposite the fitting top, and afitting side orthogonal to both the fitting top and fitting bottom, thefitting side being coupled to the pressure coupling, the fitting topbeing coupled to the toggle operated switch, and the fitting bottombeing coupled to the gas valve, the toggle arm being disposed on top ofthe toggle operated switch, wherein when the toggle arm is disposed inthe toggle activation position, the toggle operated switch allows thecompressed gas to reach the gas valve through the adapter fitting,thereby allowing the compressed gas when present to activate the gasvalve in turn allowing the process gas to flow in the input manifold andalternatively allowing the compressed gas when absent to deactivate thegas valve in turn inhibiting the process gas from flowing in the inputmanifold, and when the toggle arm is in the toggle deactivationposition, the toggle operated switch inhibits the compressed gas fromreaching the gas valve through the adapter fitting, thereby enabling thetoggle operated switch to indirectly inhibit the process gas fromflowing in the manifold irrespective whether the compressed gas isprovided.
 2. The integrated gas stick of claim 1 wherein the toggleoperated switch is configured to vent the compressed gas from within thegas valve when the toggle arm is moved from the toggle activationposition to the toggle deactivation position.
 3. The integrated gasstick of claim 1 wherein the lockout mechanism comprises: a first panelhaving a cavity through which the toggle arm is disposed, a second panelcoupled to the first panel, the second panel having a lock holeconfigured to receive the lock, wherein when the lock is disposed in thelock hole, the toggle arm is inhibited from moving from the toggledeactivation position to the toggle activation position.
 4. Theintegrated gas stick of claim 3 wherein the first panel is sandwichedbetween the toggle operated switch and the toggle arm.
 5. The integratedgas stick of claim 1 wherein the gas valve is employed in a plasmaprocessing system.
 6. The integrated gas stick of claim 1 wherein thegas valve is a gas stick inlet valve for a plasma processing system. 7.The integrated gas stick of claim 1 wherein the gas valve is anintegrated surface mount valve.
 8. The integrated gas stick of claim 1further comprising a tag-out arrangement for signaling a deactivationstate of said gas valve.
 9. The integrated gas stick of claim 1 whereinan assembly that includes the gas valve, the toggle operated switch, andthe toggle arm is mounted in a perpendicular direction with respect tothe input manifold.